Thin-Film Capacitor Technology for Improving Broadband Power Integrity
Abstract
Thin-film capacitor (TF cap) technology together with chip-scale packaging (CSP) is studied as a method to achieve broadband power integrity into the gigahertz region. TF cap structures integrated into board-level supply interconnects are analyzed with transmission-line techniques. The behavior of the resulting superlow-impedance transmission lines (SLITs) is illustrated, and the role of TF metal resistance in reducing resonances is highlighted. A single 10-mil-wide-by-100-mil-long SLIT bypass structure supplying a CSP die provides an effective impedance through 6 GHz as low as 2 Ω. The preliminary measured results from TF caps and SLITs realized on low-temperature cofired ceramic boards are reported, and issues for practical realizations are discussed.
Recommended Citation
W. B. Kuhn et al., "Thin-Film Capacitor Technology for Improving Broadband Power Integrity," IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 9, no. 7, pp. 1319 - 1327, Institute of Electrical and Electronics Engineers (IEEE), Jul 2019.
The definitive version is available at https://doi.org/10.1109/TCPMT.2019.2901569
Department(s)
Materials Science and Engineering
Research Center/Lab(s)
Center for High Performance Computing Research
Keywords and Phrases
Capacitor; Low-Temperature Co-Fired Ceramic (LTCC); Power Integrity; Superlow-Impedance Transmission Line (SLIT); Thin Film (TF); Transmission Line
International Standard Serial Number (ISSN)
2156-3950
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2019 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jul 2019
Comments
This work was supported by the Honeywell Federal Manufacturing and Technologies, LLC, which is operated for the United States Department of Energy under Contract DE-NA-0002839.