Size-induced lattice relaxation was observed for nanoscale CeO2 single crystals with an average size from 4 to 60 nm. Results showed the finest crystallites exhibited no strain-induced line broadening, while high temperature annealing resulted in larger grain sizes and significant strains. The observed shift in the x-ray diffraction lattice parameters was assumed to be due to the formation of defects on the lattice, specifically oxygen vacancies. Modeling revealed that the oxygen vacancy concentration ([V••O]) was found to be ≈4 x 1020/cm3 for the 4 nm crystallites, and decreased two orders of magnitude for larger 60 nm single crystals.
X. Zhou and W. Huebner, "Size-Induced Lattice Relaxation in CeO₂ Nanoparticles," Applied Physics Letters, vol. 79, no. 21, pp. 3512-3514, American Institute of Physics (AIP), Nov 2001.
The definitive version is available at https://doi.org/10.1063/1.1419235
Materials Science and Engineering
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© 2001 American Institute of Physics (AIP), All rights reserved.
01 Nov 2001