Microstructural Changes in Beta-silicon Nitride Grains Upon Crystallizing the Grain-boundary Glass
Abstract
Crystallizing the grain-boundary glass of a liquid-phase-sintered Si3N4 ceramic for 2 h or less at 1500° led to formation of δ-Y2Si2O7. after 5 h at 1500°, the δ-Y2Si2O7 had transformed to β-Y2Si2O7 with a concurrent dramatic increase in dislocation density within β-Si3N4 grains. Reasons for the increased dislocation density are discussed. Annealing for 20 h at 1500° reduced dislocation densities to the levels found in as-sintered material.
Recommended Citation
W. E. Lee and G. Hilmas, "Microstructural Changes in Beta-silicon Nitride Grains Upon Crystallizing the Grain-boundary Glass," Journal of the American Ceramic Society, Wiley-Blackwell, Oct 1989.
The definitive version is available at https://doi.org/10.1111/j.1151-2916.1989.tb06003.x
Department(s)
Materials Science and Engineering
Keywords and Phrases
Silicon Nitride; Microstructure; Grain Boundaries; Grains; Glass
International Standard Serial Number (ISSN)
0002-7820; 1551-2916
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 1989 Wiley-Blackwell, All rights reserved.
Publication Date
01 Oct 1989
