The Effect of Oxygen Partial Pressure on the Wetting of SiC, AlN, and Si₃N₄ by Si and a Method for Calculating the Surface Energies Involved

Author

Michael W. Barsoum
P. D. Ownby, Missouri University of Science and TechnologyFollow

Abstract

The degree to which molten silicon wets a solid, and reacts chemically and physically with it, determines the solid's usefulness as a die or container material. It is the purpose of this work to show that the oxygen partial pressure in the environment is an important factor in determining the degree to which solids are wetted by liquid silicon. Of particular interest is the PO₂ range below where SiO₂ is formed. In a recent study1 the authors have demonstrated that the oxygen activity in this range is very significant in determining both the chemical and physical interaction and the contact angle between liquid silicon and some refractory solids. The PO₂ dependence of the contact angle is then used to calculate the solid surface energies.

Recommended Citation

M. W. Barsoum and P. D. Ownby, "The Effect of Oxygen Partial Pressure on the Wetting of SiC, AlN, and Si₃N₄ by Si and a Method for Calculating the Surface Energies Involved," Surfaces and Interfaces in Ceramic and Ceramic--Metal Systems, Materials Science Research, vol. 14, pp. 457 - 466, Plenum Press, Jan 1981.

The definitive version is available at https://doi.org/10.1007/978-1-4684-3947-2_40

Department(s)

Materials Science and Engineering

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1981 Plenum Press, All rights reserved.

Publication Date

01 Jan 1981