Spin Relaxation in InGaN Quantum Disks in GaN Nanowires
Abstract
The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of 100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values.
Recommended Citation
A. Banerjee et al., "Spin Relaxation in InGaN Quantum Disks in GaN Nanowires," Nano Letters, American Chemical Society (ACS), Dec 2011.
The definitive version is available at https://doi.org/10.1021/nl203091f
Department(s)
Materials Science and Engineering
Keywords and Phrases
Spin Lifetime; GaN Nanowire; InGaN Quantum Disk; D'yakonov-Perel'; TRPL; Quantum Disk-In-Nanowire
International Standard Serial Number (ISSN)
1530-6984
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2011 American Chemical Society (ACS), All rights reserved.
Publication Date
01 Dec 2011
