Masters Theses

Keywords and Phrases

Defect Production; Displacement Energy; Knock-on Atom; Molecular Dynamics

Abstract

"Aluminum Nitride is an active element of sensors that monitor the performance and well-being of the nuclear reactors due to its piezoelectric properties. Yet, the variations of its properties under irradiation are largely unexplored. We report the results of the molecular dynamics simulations of the structural changes in AlN under irradiation via the knock-on atom technique. By creating and evolving the irradiation cascades due to energetic particle interaction with the atom of the crystalline lattice we determine the rate of the defect production as a function of the deposited energy. Further, we determine a displacement energy, a key characteristic that describes how efficient the defect production in the given material is. Comparison with the isostructural GaN is provided"--Abstract, p. iii

Advisor(s)

Chernatynskiy, Aleksandr V.

Committee Member(s)

Graham, Joseph T.
Hodovanets, Halyna

Department(s)

Physics

Degree Name

M.S. in Physics

Publisher

Missouri University of Science and Technology

Publication Date

Summer 2023

Pagination

viii, 57 pages

Note about bibliography

Includes_bibliographical_references_(pages 53-56)

Rights

© 2023 Sean Thomas Anderson, All Rights Reserved

Document Type

Thesis - Open Access

File Type

text

Language

English

Thesis Number

T 12288

Electronic OCLC #

1426046593

Download

Included in

Physics Commons

Share

 
COinS