Masters Theses
Abstract
"The effect of high electric field strengths (10⁴ to 10⁵ V/cm) present during neutron radiation on the neutron-induced defects is determined by utilizing the high electric field strength inherent in the emitter-base transistion region of an n-p-n transistor. A method is presented for the separation of neutron and gamma effects. Previous theoretical work on the ratio of base current increase to collector current decrease is applied to experimental data. The variations of the space-charge region volume damage introduction rate with neutron fluence and the average electric field strength are determined experimentally in order to obtain a measure of this effect. The dependence of the space-charge region volume damage introduction rate on neutron fluence is found empirically to be a power law relationship. The space-charge region volume damage introduction rate is shown empirically to also have a power law relationship with respect to the average electric field strength"--Abstract, page ii.
Advisor(s)
Goben, C. A.
Committee Member(s)
Hardtke, Fred C.
Bolon, Albert E., 1939-2006
Department(s)
Materials Science and Engineering
Degree Name
M.S. in Metallurgical Engineering
Sponsor(s)
U.S. Atomic Energy Commission
University of Missouri--Rolla. Graduate Center for Materials Research
Publisher
University of Missouri--Rolla
Publication Date
1972
Pagination
vi, 53 pages
Note about bibliography
Includes bibliographical references (pages 50-51).
Rights
© 1972 Paul Edward Johnson, All rights reserved.
Document Type
Thesis - Open Access
File Type
text
Language
English
Subject Headings
Electric fields -- MeasurementTransistorsEnergy dissipationGamma rays
Thesis Number
T 2718
Print OCLC #
6033246
Electronic OCLC #
880396917
Recommended Citation
Johnson, Paul Edward, "The electric field strength dependence of neutron-induced defects in silicon P-N junctions" (1972). Masters Theses. 7241.
https://scholarsmine.mst.edu/masters_theses/7241