Masters Theses

Abstract

"The development of theoretical and empirical relations which predict the permanent changes to the electrical characteristics of silicon transistors is described in this paper. Analytical techniques are also developed to obtain the parameters used in the Modified Ebers-Moll transistor model. The method employed is to determine the effects on externally measurable characteristics and to relate these changes to the parameters in the Modified Ebers-Moll transistor model. Further, all nonlinear characteristics are related to the independent variables with interpolating polynomials and degraded characteristics presented. then degraded characteristics are used to establish the parameters for and parameter changes to the transistor model used in the iterative NET-1 digital computer program. The result is a complete technique to predict the characteristics VBE(sat), VBD(forward), VCD(sat), ICBO, and hFE as functions of neutron fluence to the Modified Ebers-Moll transistor model. For common emitter dc current gains down to approximately unity, a satisfactory nonlinear model exists for the neutron degraded characteristics found in silicon transistors. Typically, the gain characteristic is established to within 4 percent of the desired characteristic for the transistor model"--Abstract, page ii.

Advisor(s)

Peirson, Robert C., 1943-

Committee Member(s)

Dillman, Norman G., 1938-2010
Hotz, Henry P.

Department(s)

Electrical and Computer Engineering

Degree Name

M.S. in Electrical Engineering

Publisher

University of Missouri--Rolla

Publication Date

1969

Pagination

xii, 181 pages

Note about bibliography

Includes bibliographical references (pages 41-42).

Rights

© 1969 Kenneth Robert Smith, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Subject Headings

TransistorsSiliconSemiconductors -- Effect of radiation onMicroelectronics

Thesis Number

T 2263

Print OCLC #

6009403

Electronic OCLC #

835140713

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