Masters Theses

Abstract

"It has not been possible in the past to characterize a transistor or other semiconductor device with regard to its performance in a fast neutron (E>10keV) environment when the device is operated at high (>100 MHz) frequencies. Using the scattering (s-) parameter concept, which regards a device as a two-port "black box", a full characterization of the trends in the neutron bombarded high-frequency performance of a typical transistor can be made. Scattering parameters are not only an accurate means of describing the high-frequency performance of any device, but are now reasonably easily measured with the advent on the market of reliable, highly accurate s-parameter test sets. Methods which exist to permit the rapid design of high-frequency transistor circuits, once the device scattering parameters are known, are reviewed. The effects of neutron bombardment on a high-frequency transistor amplifier are found to be generally enhancing, rather than degrading as expected, if the device is operating near or above the published minimum fT"--Abstract, page i.

Advisor(s)

Goben, C. A.

Committee Member(s)

Bolon, Albert E., 1939-2006
Adair, James E.
Dillman, Norman G., 1938-2010

Department(s)

Electrical and Computer Engineering

Degree Name

M.S. in Electrical Engineering

Sponsor(s)

U.S. Atomic Energy Commission

Publisher

University of Missouri--Rolla

Publication Date

1969

Pagination

v, 48 pages, 45 pages

Note about bibliography

Includes bibliographical references (page 18).

Rights

© 1969 David Leslie Gray, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Subject Headings

TransistorsFast neutrons -- Scattering

Thesis Number

T 2303

Print OCLC #

5155706

Electronic OCLC #

835100414

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