Thermal runaway in power transistors

Author

Jerry H. Lee

Abstract

"Considerable work has been done on the theory of thermal runaway and the relationship between transistor junction temperature and collector power dissipation. The first part of this thesis is a review of literature. An equation for the normalized junction temperature and its peak value is developed. From this equation, the junction temperature at the thermal runaway point for a given maximum power dissipation could be determined. The second part of this thesis is experimental. The author examined the thermal runaway points for eight different transistors in the basic common emitter class A circuit which operated under no signal DC conditions"--Abstract, page iii.

Advisor(s)

Carson, Ralph S.

Committee Member(s)

Boone, Jack L.
Ho, C. Y. (Chung You), 1933-1988

Department(s)

Electrical and Computer Engineering

Degree Name

M.S. in Electrical Engineering

Publisher

University of Missouri--Rolla

Publication Date

1968

Pagination

ix, 38 pages

Rights

© 1968 Jerry H. Lee, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Subject Headings

Electronic apparatus and appliances -- Temperature controlTransistors

Thesis Number

T 2116

Print OCLC #

5995603

Electronic OCLC #

805937763

Recommended Citation

Lee, Jerry H., "Thermal runaway in power transistors" (1968). Masters Theses. 6906.
https://scholarsmine.mst.edu/masters_theses/6906