Sessile drop studies of aluminum on sapphire

Author

Ke Wen K. Li

Abstract

A sessile drop technique employing a drop placement method has been used to investigate the wetting behavior and interfacial phenomena between aluminum and single crystal α-alumina. Measurements were made under a flowing mixture of H₂ and He atomsphere from 1200°C to 1600°C. Acute contact angles decreased continuously in all cases during the 8-hour experimental time. Neither the oxygen partial pressure of the flowing gas nor the orientation of the single crystal alumina substrate affected the contact angles, but the shapes of crystals grown at the substrate-metal interfaces were dependent on the orientation of the substrate surface to some extent. Indirect evidence showed that Al₂O, the gaseous product of the reaction between Al and Al₂O₃, was responsible for the crystals grown at the substrate-metal interfaces

Advisor(s)

Ownby, P. D.

Committee Member(s)

Anderson, H. U. (Harlan U.)
Dawson, Darrow Finch, 1931-2007

Department(s)

Materials Science and Engineering

Degree Name

M.S. in Ceramic Engineering

Publisher

University of Missouri--Rolla

Publication Date

Fall 1988

Pagination

x, 86 pages

Note about bibliography

Includes bibliographical references (pages 67-70).

Rights

© 1988 Kewen K. Li, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Thesis Number

T 5766

Print OCLC #

19452975

Electronic OCLC #

1050112480

Recommended Citation

Li, Ke Wen K., "Sessile drop studies of aluminum on sapphire" (1988). Masters Theses. 687.
https://scholarsmine.mst.edu/masters_theses/687