Dynamic capacitance of metal-oxide-semiconductor field-effect transistors

Author

Marion Wendell Tucker

Abstract

"A transient peak was observed for MOSFET devices when measuring the dynamic capacitance versus applied gate voltage for various configurations at low frequencies. This peak is absent in conventional steady-state ac measurements. Since the peak is also absent in high grade devices and at high frequencies a possible explanation in terms of surface state traps is discussed for the observed phenomena"--Abstract, page ii.

Advisor(s)

Dillman, Norman G., 1938-2010

Committee Member(s)

Levine, Norman E.
Bolander, Richard W., 1940-

Department(s)

Electrical and Computer Engineering

Degree Name

M.S. in Electrical Engineering

Sponsor(s)

National Science Foundation (U.S.)

Publisher

University of Missouri at Rolla

Publication Date

1968

Pagination

v, 76 pages

Rights

© 1968 Marion Wendell Tucker, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Subject Headings

Electric power system stabilityMetal oxide semiconductor field-effect transistorsSemiconductors -- Testing

Thesis Number

T 2160

Print OCLC #

5999790

Electronic OCLC #

794229612

Recommended Citation

Tucker, Marion Wendell, "Dynamic capacitance of metal-oxide-semiconductor field-effect transistors" (1968). Masters Theses. 5184.
https://scholarsmine.mst.edu/masters_theses/5184