Sensitivity of the ellipsometric parameters to the angle of incidence for GaAs

Author

Jie-Fang Li

Abstract

"Ellipsometry was used to study a 10¹⁸ si-doped GaAs substrate and a 5 μm metal organic chemical vapor deposited (MOCVD) GaAs film on a similar substrate. The sensitivity of Ψ and Δ to Ø was studied, and the region of highest sensitivity was found for both samples. The optical constants for the 10¹⁸ Si-doped GaAs substrate and the 5 μm GaAs film were found to be N₂ = (3.768-0.491j) and N₂ = (3.704-0􀁐599j), respectively. The dependence of the sensitivity of Ψ and Δ to Ø was also calculated for various optical constants"-- Abstract. p. ii

Advisor(s)

Alexander, Ralph William, Jr.

Committee Member(s)

Peacher, Jerry
Boone, Jack L.

Department(s)

Physics

Degree Name

M.S. in Physics

Publisher

University of Missouri--Rolla

Publication Date

Spring 1987

Pagination

ix, 49 pages

Rights

© 1987 Jie-Fang Li, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Thesis Number

T 5479

Print OCLC #

16799219

Recommended Citation

Li, Jie-Fang, "Sensitivity of the ellipsometric parameters to the angle of incidence for GaAs" (1987). Masters Theses. 471.
https://scholarsmine.mst.edu/masters_theses/471