Abstract
To model the avalanche breakdown of a voltage regulator diode under reverse bias, a computationally rigorous device physics model using the Monte Carlo method to solve charge carrier Boltzmann transport equations (BTEs) is proposed. The transport of energetic charge carriers is calculated by using the full energy band instead of the non-parabolic band structure. The position-dependent doping profile found in real diodes is modeled accurately and time-efficiently. A two-step method is introduced to accelerate the simulation of avalanche breakdown. With the proposed model, the expected IV characteristics of a voltage regulator diode under reverse bias are simulated. The transport of charge carriers and avalanche breakdown are modeled at the microscopic level, and the simulation results are verified through comparison with the IV characteristics from the datasheet. This model can be used to analyze device susceptibility to electrical stress, providing a graphical visualization for failure mechanisms.
Recommended Citation
Z. Sun et al., "Monte Carlo Particle Simulation of Avalanche Breakdown in a Reverse Biased Diode with Full Band Structure," Proceedings - Electronic Components and Technology Conference, pp. 2287 - 2291, Institute of Electrical and Electronics Engineers, Jan 2022.
The definitive version is available at https://doi.org/10.1109/ECTC51906.2022.00361
Department(s)
Engineering Management and Systems Engineering
Second Department
Electrical and Computer Engineering
Keywords and Phrases
avalanche breakdown; Monte Carlo particle simulation; Voltage regulator diode
International Standard Book Number (ISBN)
978-166547943-1
International Standard Serial Number (ISSN)
0569-5503
Document Type
Article - Conference proceedings
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jan 2022
Comments
National Science Foundation, Grant IIP-1916535