Abstract
We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.
Recommended Citation
J. H. Choi et al., "A Novel Thin Film Transistor Using Double Amorphous Silicon Active Layer," IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), Jan 1998.
The definitive version is available at https://doi.org/10.1109/16.711377
Department(s)
Electrical and Computer Engineering
Second Department
Chemical and Biochemical Engineering
Keywords and Phrases
Si:H; Cl-Si:H; Amorphous Semiconductors; Double Amorphous Silicon Stacked Active Layer; Elemental Semiconductors; Leakage Currents; Off-State Photo-Leakage Current; Silicon; Thin Film Transistor; Thin Film Transistors
International Standard Serial Number (ISSN)
0018-9383
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1998 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jan 1998
