In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the adaptive optimal reverse body-bias voltage. The adaptive optimal body-bias voltage is generated from the proposed leakage monitoring circuit, which compares the subthreshold current (ISUB) and the band-to-band tunneling (BTBT) current (IBTBT). The proposed circuit was simulated in HSPICE using 32-nm bulk CMOS technology and evaluated using ISCAS85 benchmark circuits at different operating temperatures (ranging from 25°C to 100°C). Analysis of the results shows a maximum of 551 and 1491 times leakage power reduction at 25°C and 100°C, respectively, on a circuit with 546 gates. The proposed approach demonstrates that the optimal body bias reduces a considerable amount of standby leakage power dissipation in nanoscale CMOS integrated circuits. In this approach, the temperature and supply voltage variations are compensated by the proposed feedback loop.
H. Jeon et al., "Standby Leakage Power Reduction Technique for Nanoscale CMOS VLSI Systems," IEEE Transactions on Instrumentation and Measurement, vol. 59, no. 5, pp. 1127-1133, Institute of Electrical and Electronics Engineers (IEEE), May 2010.
The definitive version is available at https://doi.org/10.1109/TIM.2010.2044710
Electrical and Computer Engineering
Keywords and Phrases
Band-To-Band Tunneling (BTBT) Leakage; Gate Leakage; Leakage Current; Leakage Power; Optimal Body Bias Voltage; Subthreshold Leakage; Band to Band Tunneling; Body Bias; Sub-Threshold Leakage; Bias Voltage; CMOS Integrated Circuits; Electric Network Analysis; Nanostructured Materials; Optimization; Standby Power Systems; Tunneling (Excavation); Wind Tunnels
International Standard Serial Number (ISSN)
Article - Journal
© 2010 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 May 2010