Abstract
As one of the two-dimensional (2-D) transition metal dichalcogenides, atomically thin molybdenum disulfide (MoS2) has attracted significant attention and research interests for micro and nano electronic applications. Significant efforts have been made to develop different approaches in order to obtain atomic layer MoS2, such as exfoliation, chemical synthesis, and physical or chemical vapor deposition (CVD) processes. In this paper, we report a hydrogen-free and promoter-free CVD growth to synthesize large-area MoS2 atomic layers. A variety of techniques including optical microscopy (OM), atomic force microscopy (AFM), photoluminescence (PL) mapping, Raman and x-ray photoelectron spectroscopy (XPS), high resolution electron microscopy (HREM) and scanning transmission electron microscopy (STEM) were applied to characterize the film quality, uniformity and layer numbers. High quality centimeter-sized MoS2 atomic layers were demonstrated, which form a foundation to develop wafer-sized material platform for device fabrication and production.
Recommended Citation
H. Nguyen et al., "Synthesis of Large-scale 2-D MoS2 Atomic Layers by Hydrogen-free and Promoter-free Chemical Vapor Deposition," Materials Letters, vol. 168, pp. 1 - 4, Elsevier, Apr 2016.
The definitive version is available at https://doi.org/10.1016/j.matlet.2015.12.068
Department(s)
Electrical and Computer Engineering
Publication Status
Full Text Access
Keywords and Phrases
2-D material; Chemical vapor deposition; Molybdenum disulfide; Transition metal dichalcogenides; Wafer-size
International Standard Serial Number (ISSN)
1873-4979; 0167-577X
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Elsevier, All rights reserved.
Publication Date
01 Apr 2016
