Abstract
In this paper, a comparison of different techniques for SiC high-voltage devices is performed using numerical simulations. In particular, the method of counter doping (CD) introduced in the junction termination extension (JTE) region to create a multizone termination effect is investigated. Simulation shows that compared with the other edge termination techniques, CD-JTE greatly reduces the sensitivity of breakdown voltage (BV) to JTE doses and surface charges. The multizone CD-JTE with outer rings shows that for a 30-μm thick epi-layer, 90% of the theoretical BV is achievable with a wide tolerance of 11 x 1012 cm2 to the JTE dose and 85% of the theoretical BV with an increased tolerance of 6.19 x 1012 cm2 to the positive surface charges, both superior to other JTE structures investigated in this paper.
Recommended Citation
C. F. Huang et al., "Counter-doped JTE, an Edge Termination for HV SiC Devices with Increased Tolerance to the Surface Charge," IEEE Transactions on Electron Devices, vol. 62, no. 2, pp. 354 - 358, article no. 6923422, Institute of Electrical and Electronics Engineers, Feb 2015.
The definitive version is available at https://doi.org/10.1109/TED.2014.2361535
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Counter doped (CD); high voltage; junction termination extension (JTE); silicon carbide (SiC).
International Standard Serial Number (ISSN)
0018-9383
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Feb 2015
