Abstract
Resistive switching properties of nanoscale zirconium dioxide (ZrO2) thin film deposited by plasma-enhanced atomic layer deposition (PE-ALD) have been investigated. A resistive memory device has been formed with a 10-nm-thick ZrO2 film as an active switching layer sandwiched between an aluminum top electrode and a silver bottom electrode. Bipolar resistive switching characteristics were demonstrated by current–voltage measurements with a read memory window of 6.6 V, an ON/OFF current ratio of nearly 105 , and a retention time of 104 s. Current conduction at low resistance states follows Ohm's law while at a high-resistance state governed by space charge limited conduction. These indicate that the switching mechanism is attributed to filamentary conduction. A SPICE model was applied to model the device, with simulation measurement data in good agreement. This study proves the potential applications of PE-ALD ZrO2 for non-volatile resistive random-access memories.
Recommended Citation
A. A. Sivkov et al., "Resistive Switching Properties of ZrO2 Film by Plasma-Enhanced Atomic Layer Deposition for Non-volatile Memory Applications," Journal of Electronic Materials, vol. 50, no. 9, pp. 5396 - 5401, Springer, Sep 2021.
The definitive version is available at https://doi.org/10.1007/s11664-021-09065-6
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
non-volatile memory; plasma-enhanced atomic layer deposition; resistive random access memory; resistive switching; Zirconium dioxide
International Standard Serial Number (ISSN)
1543-186X; 0361-5235
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Springer, All rights reserved.
Publication Date
01 Sep 2021
Comments
U.S. Department of Defense, Grant W911NF-17-1-0474