Investigation of Honey Thin Film as a Resistive Switching Material for Nonvolatile Memories

Author

Aleksey A. Sivkov
Yuan Xing
Kuan Yew Cheong
Xiangqun Zeng
Feng Zhao, Missouri University of Science and TechnologyFollow

Abstract

In this paper, we report, for the first time, honey thin film as a resistive switching material and its memory behaviors. A dried honey film was sandwiched in between a CuxO bottom electrode and a Cu top electrode to form a metal-insulator-metal structure on a glass substrate. Current-voltage measurements showed that the device exhibited bipolar switching characteristics with Ohmic conduction behavior and a read memory window of 2.6 V. When biased at a read voltage of 0.2 V, the data retention time is over an interval of 10⁴ s and ON/OFF ratio is in the order of 10⁷. These properties prove the potential of honey based organic resistive switching devices for "green" electronics and nonvolatile memory applications.

Recommended Citation

A. A. Sivkov et al., "Investigation of Honey Thin Film as a Resistive Switching Material for Nonvolatile Memories," Materials Letters, vol. 271, article no. 127796, Elsevier, Jul 2020.

The definitive version is available at https://doi.org/10.1016/j.matlet.2020.127796

Department(s)

Electrical and Computer Engineering

Publication Status

Full Text Access

Keywords and Phrases

Honey; Metal-insulator-metal; Nonvolatile memory; Organic; Resistive switching

International Standard Serial Number (ISSN)

1873-4979; 0167-577X

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2025 Elsevier, All rights reserved.

Publication Date

15 Jul 2020