Correlation of Natural Honey-Based RRAM Processing and Switching Properties by Experimental Study and Machine Learning
Abstract
Natural honey is a promising material for hardware components of nonvolatile memory and artificial synaptic devices in emerging renewable and biodegradable neuromorphic systems. The resistive switching properties of these devices are closely correlated with device process conditions. In this paper, honey based resistive random access memory (RRAM) devices were fabricated with different metal electrodes and drying temperature and duration. SET and RESET voltages were measured and used as dataset to train machine learning algorithms. Four machine learning models were applied to process data and demonstrated an average accuracy of 89.9 % to 91.6 % to predict the SET voltages in the range of [0 V, 6 V]. This study established a useful practice for fabrication of RRAM devices based on honey and can be extended to other natural organic materials.
Recommended Citation
B. Sueoka et al., "Correlation of Natural Honey-Based RRAM Processing and Switching Properties by Experimental Study and Machine Learning," Solid State Electronics, vol. 197, article no. 108463, Elsevier, Nov 2022.
The definitive version is available at https://doi.org/10.1016/j.sse.2022.108463
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Artificial synaptic device; Honey; Machine learning; Neuromorphic systems; Nonvolatile memory; Resistive switching memory
International Standard Serial Number (ISSN)
0038-1101
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Elsevier, All rights reserved.
Publication Date
01 Nov 2022

Comments
National Science Foundation, Grant ECCS-2104976