Abstract

A comprehensive study of dielectric modulated (DM) drift regions for power devices is presented in this paper. The performance of this structure is theoretically analyzed and compared with both conventional and super junction (SJ) structures. In this paper, an analytical model for DM drift regions with cylindrical cells is proposed and compared with linear cells. An optimal tradeoff between breakdown voltage (BV) and specific ON-resistance (R ON,sp) is obtained by a methodology developed in this paper. 3-D simulations of DM structures with hexagonal cells approximated by cylindrical cells are conducted to verify the analytical model. Optimal BV-R ON,sp tradeoffs for devices with conventional and SJ drift regions are also obtained through the same methodology and verified by 3-D simulations. Static characteristics of these three different drift region structures in both Si and SiC power devices are compared.

Department(s)

Electrical and Computer Engineering

Comments

Ministerio de Ciencia y Tecnología, Grant 103-2623-E-007-011-IT

Keywords and Phrases

Analytical model; cylindrical cell; dielectric modulation (DM); silicon; silicon carbide; superjunction (SJ).

International Standard Serial Number (ISSN)

0018-9383

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.

Publication Date

01 Jun 2016

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