Abstract
In this paper, we systematically study the effect of gate structures of a 4H-SiC UMOSFET on its performance, focusing on the fast-switching performance. Based on the simulation results, DC and AC characteristics of different gate structures are compared. It is found that a structure of UMOSFET, combining a grounded split-gate (SG), a trench bottom protection P+ shielding layer (PS) and a current spreading layer (CSL), yields the best compromise.
Recommended Citation
J. Y. Jiang et al., "Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures," 2019 Electron Devices Technology and Manufacturing Conference Edtm 2019, pp. 401 - 403, article no. 8731332, Institute of Electrical and Electronics Engineers, Mar 2019.
The definitive version is available at https://doi.org/10.1109/EDTM.2019.8731332
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Ciss; Coss; Crss; Qg; SiC UMOSFETs; split-gate
International Standard Book Number (ISBN)
978-153866508-4
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Mar 2019
Comments
Ministry of Science and Technology of the People's Republic of China, Grant 107-2218-E-007 -042