Abstract
With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives due to their biodegradability and benign environmental impacts. Herein, polymannose is used to demonstrate resistive-switching characteristics with twelve distinctive and reliable memory states that were modulated by the compliance current at a READ voltage as low as −0.05 V.d-Mannose powder and ethanol were mixed to produce the precursor for the formation of a polymannose filmviadrop casting on an ITO/PET substrate and dried at 160 °C for different durations before an array of Ag was deposited as the top electrode. The optimal drying time of 7 h provided competitive resistive switching characteristics, with a READ window of 2.2 V, high ON/OFF ratio of >105at a relatively low READ voltage of 0.01 V, acceptable endurance cycles of approximately 102, and retention time of >104s. These results demonstrate the potential of polymannose as a candidate material for environmentally friendly resistive-switching random access memory.
Recommended Citation
I. A. Tayeb et al., "Resistive Switching Behaviour in a Polymannose Film for Multistate Non-volatile Memory Application," Journal of Materials Chemistry C, vol. 9, no. 4, pp. 1437 - 1450, Royal Society of Chemistry, Jan 2021.
The definitive version is available at https://doi.org/10.1039/d0tc04655h
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
2050-7526; 2050-7534
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Royal Society of Chemistry, All rights reserved.
Publication Date
28 Jan 2021

Comments
Ministry of Higher Education, Malaysia, Grant None