Abstract
Commercially purchased pectin powder was formulated and processed into a thin film with different drying temperatures (60 °C–180 °C) and subsequently, sandwiched between Ag and ITO as top and bottom electrodes, respectively, for resistive switching memory study. Chemical functional groups, surface roughness, elemental chemical composition, and cross-sectional morphology of the dried pectin thin film were investigated via Fourier transform infrared spectroscopy, atomic force microscopy, and high-resolution transmission electron microscopy-energy dispersive X-ray spectroscopy. The higher the drying temperature, the rougher the surface with less residual moisture and more defect sites within the thin film was observed. Current–voltage measurements together with the chemical analysis results were used to establish the resistive switching mechanism. Resistive switching controlled by oxygen vacancy as conductive paths with ON/OFF ratio of 104, memory window of 3.6 V, and retention time of 10 years with READ voltage as low as − 0.01 V for pectin dried at 180 °C has been demonstrated.
Recommended Citation
P. L. Yap et al., "Effects of Drying Temperature on Preparation of Pectin Polysaccharide Thin Film for Resistive Switching Memory," Journal of Materials Science Materials in Electronics, vol. 33, no. 25, pp. 19805 - 19826, Springer, Sep 2022.
The definitive version is available at https://doi.org/10.1007/s10854-022-08795-5
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
1573-482X; 0957-4522
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Springer, All rights reserved.
Publication Date
01 Sep 2022
Comments
Universiti Sains Malaysia, Grant None