Abstract
In this work, we designed, fabricated, and characterized the first nitrogen (N)-doped single-crystalline 4H silicon carbide (4H-SiC) electrode for sensing the neurotransmitter dopamine. This N-doped 4H-SiC electrode showed good selectivity for redox reactions of dopamine in comparison with uric acid (UA), ascorbic acid (AA), and common cationic ([Ru(NH3)6]3+), anionic ([Fe(CN)6]3-), and organic (methylene blue) redox molecules. The mechanisms of this unique selectivity are rationalized by the unique negative Si valency and adsorption properties of the analytes on the N-doped 4H-SiC surface. Quantitative electrochemical detection of dopamine by the 4H-SiC electrode was achieved in the linear range from 50 nM to 10 μM with a detection limit of 0.05 μM and a sensitivity of 3.2 nA.μM-1 in a pH = 7.4 phosphate buffer solution. In addition, the N-doped 4H-SiC electrode demonstrated excellent electrochemical stability. This work forms the foundation for developing 4H-SiC as the next-generation robust and biocompatible neurointerface material for a broad range of applications such as the in vivo sensing of neurotransmitters.
Recommended Citation
F. Fathi et al., "Nitrogen-Doped 4H Silicon Carbide Single-Crystal Electrode for Selective Electrochemical Sensing of Dopamine," Analytical Chemistry, vol. 95, no. 11, pp. 4855 - 4862, American Chemical Society, Mar 2023.
The definitive version is available at https://doi.org/10.1021/acs.analchem.2c03609
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
1520-6882; 0003-2700
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 American Chemical Society, All rights reserved.
Publication Date
21 Mar 2023
Comments
National Institutes of Health, Grant R21EY031405-02