Abstract

The effects of C60 incorporated in polymannose-based resistive switching memory have been systematically investigated for the first time in bioorganic-based resistive switching memory. C60 with different concentrations (0–7 wt.%) is dispersed in polymannose precursor, drop-casted on ITO/PET substrate, and dried to form a thin film. Electrochemically inert Au–Pd is used as top electrode. The devices with embedded C60 show better endurance and stability. Read memory window decreases and ON/OFF ratio increases as the concentration of C60 increases. Stable retention time up to 10 years is achieved for all of the devices except the one with 7 wt.% C60. Based on zeta potential measurement, polymannose is more negatively charged than C60. Hence, C60 functions as an effective interlock that bridges between long molecular chains of polymannose and enhances the resistive switching properties of the polymannose thin film.

Department(s)

Electrical and Computer Engineering

Publication Status

Full Access

Comments

National Science Foundation, Grant ECCS‐2104976

Keywords and Phrases

electronic materials; fullerenes; functional; green materials; polymannose; resistive switching

International Standard Serial Number (ISSN)

1862-6270; 1862-6254

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2025 Wiley, All rights reserved.

Publication Date

01 Dec 2022

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