Bio-Organic based Resistive Switching Random-Access Memory

Abstract

A non-volatile memory is a solid-state device that can retain data even when power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things. There are various emerging non-volatile memory technologies in different technology-readiness levels, to replace the existing technologies with limited memory density, operating speed, power consumption, manufacturability, and data security. Of the emerging technologies, resistive switching technology is one of the most promising next generation nonvolatile random-access memories. The fundamental working principle of the resistive-switching random-access memory (ReRAM) is based on memristor characterises with metal-insulator-metal stacking structure. Same as other solid-state devices, ReRAM is also facing issue of electronic waste when the memory device is discarded. To overcome this issue, bio-organic materials as green and sustainable engineering materials have been used to fabricate ReRAM. In this review, development of bio-organic based ReRAM, in particular the resistive switching mechanisms and device performance, have been discussed and challenging and future applications of this memory have been provided.

Department(s)

Electrical and Computer Engineering

Comments

Ministry of Higher Education, Malaysia, Grant None

Keywords and Phrases

bio-organic materials; green electronic; resistive switching memory

International Standard Serial Number (ISSN)

1662-9779; 1012-0394

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2025 Trans Tech Publications, All rights reserved.

Publication Date

01 Jan 2023

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