Abstract
In this study, semiconductor oxide cuprite (Cu2O) and indium tin oxide (ITO) heterojunction solar cells with and without a 10 nm thick titanium (Ti) thin film as the buffer layer were fabricated and characterized for comparison. The Cu2O film was formed by low-cost electrodeposition, and Ti and ITO layers were deposited on a glass substrate by sputtering. The interfacial microstructures, surface topology, and electrical and photovoltaic properties of both solar cells were investigated. The test results showed that the Ti buffer layer changed the surface morphology, resistivity, and contact potential of the electrodeposited Cu2O film. With these changes, the photovoltaic performances of the Cu2O/Ti/ITO solar cell including open-circuit voltage (VOC) and short-circuit current (ISC) were all enhanced compared to the Cu2O/ITO solar cell, and the power conversion efficiency was improved from 1.78% to 2.54%. This study offers a promising method to improve the efficiency of Cu2O-based solar cells for sustainability in material resource, environment and eco-system, and energy production.
Recommended Citation
B. Wang et al., "Cu2O Heterojunction Solar Cell with Photovoltaic Properties Enhanced by a Ti Buffer Layer," Sustainability Switzerland, vol. 15, no. 14, article no. 10876, MDPI, Jul 2023.
The definitive version is available at https://doi.org/10.3390/su151410876
Department(s)
Electrical and Computer Engineering
Publication Status
Open Access
Keywords and Phrases
buffer layer; Cu2O; electrodeposition; photovoltaic property; solar cell
International Standard Serial Number (ISSN)
2071-1050
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2025 The Authors, All rights reserved.
Creative Commons Licensing
This work is licensed under a Creative Commons Attribution 4.0 License.
Publication Date
01 Jul 2023
