Resistive Switching Characteristics of Fullerene in Pectin Polysaccharide Thin Film

Abstract

The demand for eco-friendly, nonvolatile memory technologies in artificial intelligence and the Internet of Things highlight the need for sustainable innovations. This study explores incorporating C60 into pectin polysaccharide thin films as sustainable resistive switching random access memory (ReRAM) alternatives. Employing the SON/nC60 method, C60 was integrated into pectin at concentrations of 0.05, 0.10, 0.15, and 0.20 wt.%, enhancing resistive switching characteristics. Fourier transform infrared spectroscopy, atomic force microscopy, and semiconductor parameter analysis characterized the device's properties. Notably, the incorporation of 0.20 wt.% C60 significantly enhanced the resistive switching performance of the pectin-based devices, achieving an increase of nearly three orders of magnitude in the ON/OFF ratio and a 1.96 times improvement in the Read Memory Window compared with pure pectin devices, while maintaining stable performance over 100 switching cycles. Higher C60 levels create a denser cross-linked network, raising the energy threshold for switching. This research suggests that pectin-C60 films are viable, environmentally responsible ReRAM materials, advancing bio-organic applications in sustainable electronics.

Department(s)

Electrical and Computer Engineering

Comments

Ministry of Higher Education, Malaysia, Grant 2247342

Keywords and Phrases

crosslink: biomolecular, green polymers, electronic properties, devices, nanomaterials; fullerene; pectin polysaccharide; resistive switching memory

International Standard Serial Number (ISSN)

2049-1239; 2049-1220

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.

Publication Date

01 Jan 2025

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