Abstract
This paper reports single crystalline 4H-SiC MEMS with homoepitaxial n-p-n structure and its resonant characteristics under electrostatic actuation. Single crystalline fully exploits the superior material properties of SiC for operations in harsh environments. Compared to previously report p-n structure, the n-p-n structure makes electrostatic actuation applicable which is essentially important for applications of resonators and actuators to sensor devices. Such n-p-n structure, complementing the p-n structure, also further extends the capability of monolithic integration between SiC MEMS and electronic devices and circuits with not only p-n configurations such as diodes, but also n-p-n configurations such as BJTs and MOSFETs, etc.
Recommended Citation
F. Zhao and A. V. Lim, "Fabrication and Characterization of Single Crystalline 4H-SiC MEMS Devices with N-p-n Homoepitaxial Structure," Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems MEMS, pp. 276 - 279, article no. 7050942, Institute of Electrical and Electronics Engineers, Feb 2015.
The definitive version is available at https://doi.org/10.1109/MEMSYS.2015.7050942
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-147997955-4
International Standard Serial Number (ISSN)
1084-6999
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
26 Feb 2015
