Abstract
Gadolinium-doped gallium nitride implanted with oxygen and carbon show carrier-mediated spin mechanisms at room temperature. As-grown Gd-doped GaN grown by metal-organic chemical vapor deposition using a tris(cyclopentadienyl) gadolinium precursor shows Ordinary Hall Effect and no ferromagnetism at room temperature. Upon O or C implantation in Gd-doped GaN, Anomalous Hall Effect that is indicative of carrier-mediated spin and ferromagnetism is observed. A good crystal quality is maintained even after implantation. O and C favor interstitial sites and occupy deep-level acceptor-type states in Gd-doped GaN. Room-temperature spin and ferromagnetism that is induced by gadolinium in Gd-doped GaN is activated by O and C that occupy interstitial sites. Carrier-mediated mechanism for spin functionalities shows potential for the control and manipulation of spin as a quantum state in gallium nitride. This makes GaGdN:OC a potential semiconductor material base of interest for room temperature spintronics and quantum information science applications. In this paper, doping of O and C in Gd-doped GaN using ion implantation, structural characterization using X-ray diffraction, and spin-related measurement using Advanced Hall Effect are investigated, and corresponding discussions are made.
Recommended Citation
V. Saravade et al., "Spin Mechanisms in Gd-doped GaN Implanted with Oxygen Carbon at Room Temperature," IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers, Jan 2025.
The definitive version is available at https://doi.org/10.1109/JSTQE.2025.3534663
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Anomalous Hall Effect; Gallium nitride; Quantum materials; Spintronics
International Standard Serial Number (ISSN)
1558-4542; 1077-260X
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jan 2025
