Abstract
X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates result in the contraction of Zn-O bond length.
Recommended Citation
J. Xin and C. M. Chang and C. H. Hsueh and J. F. Lee and J. M. Chen and H. H. Lin and N. Lu and I. T. Ferguson and Y. Guan and L. Wan and Q. Yang and Z. C. Feng, "X-ray Absorption Fine Structure of ZnO Thin Film on Si and Sapphire Grown by MOCVD," 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016, article no. 7543313, Institute of Electrical and Electronics Engineers, Aug 2016.
The definitive version is available at https://doi.org/10.1109/ISNE.2016.7543313
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
EXAFS; MOCVD; substrate; XANES; ZnO
International Standard Book Number (ISBN)
978-150902439-1
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
12 Aug 2016
Comments
National Science Foundation, Grant 2013GXUSFFA019001