Abstract
III-nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on Ill-nitrides revolutionize the solid-state lighting industry. Ill-nitrides based solar cells, and thermoelectric generators support the sustainable energy progress, and the III-nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped Ill-nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review Ill-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectric and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations is reported, and the future applications are estimated.
Recommended Citation
C. Zhou and A. Ghods and V. G. Saravade and P. V. Patel and K. L. Yunghans and C. Ferguson and Y. Feng and X. Jiang and B. Kucukgok and N. Lu and I. T. Ferguson, "The Ill-nitrides as a Universal Compound Semiconductor Material: A Review," ECS Transactions, vol. 77, no. 6, pp. 3 - 21, The Electrochemical Society, Jan 2017.
The definitive version is available at https://doi.org/10.1149/07706.0003ecst
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-160768809-9
International Standard Serial Number (ISSN)
1938-5862; 1938-6737
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 The Electrochemical Society, All rights reserved.
Publication Date
01 Jan 2017
