Abstract
In this work, an effective strategy for achieving efficient p-type doping in wide bandgap nitride semiconductors was proposed to overcome the fundamental issue of high activation energy. We demonstrated that a hole concentration as high as 1.4 x 1018 cm-3 could been achieved through In-Mg co-doping. The electronic structure of the system and the formation energy of impurity were analyzed via first principal calculation to clarify the underlying physics and the ambiguity in understanding of the origin of the high hole concentration. Our results indicated that the original valence band maximum of the host materials could be modified, thus improving the p-type dopability. We showed that the calculated ionization energy ε(-/0) of acceptor is only about 135 meV, which is much smaller than that of the isolated Mg acceptor.
Recommended Citation
Z. Liu et al., "Co-doping of Magnesium with Indium in Nitrides: First Principle Calculation and Experiment," RSC Advances, vol. 6, no. 6, pp. 5111 - 5115, Royal Society of Chemistry, Jan 2016.
The definitive version is available at https://doi.org/10.1039/c5ra24642c
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
2046-2069
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2024 The Authors, All rights reserved.
Publication Date
01 Jan 2016
Comments
National Science Foundation, Grant 2013AA03A101