Abstract
The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K-1 and 21.84 x 10-4 Wm-1K-1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.
Recommended Citation
B. Kucukgok et al., "The Structural Properties of InGaN Alloys and the Interdependence on the Thermoelectric Behavior," AIP Advances, vol. 6, no. 2, article no. 025305, American Institute of Physics, Feb 2016.
The definitive version is available at https://doi.org/10.1063/1.4941934
Department(s)
Electrical and Computer Engineering
Publication Status
Open Access
International Standard Serial Number (ISSN)
2158-3226
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2024 The Authors, All rights reserved.
Creative Commons Licensing
This work is licensed under a Creative Commons Attribution 4.0 License.
Publication Date
01 Feb 2016
Comments
National Science Foundation, Grant DMR-1420013