Abstract
Through-silicon-vias (TSVs) can potentially be used to implement inductors in three-dimensional (3D) integrated systems for minimal footprint and large inductance. However, different from conventional 2D spiral inductors, TSV inductors are fully buried in the lossy substrate, thus suffering from low quality factor. In this paper, we propose a novel shield mechanism utilizing the micro-channel, a technique conventionally used for heat removal, to reduce the substrate loss. This technique increases the quality factor and the inductance of the TSV inductor by up to 21x and 17x respectively. It enables us to implement TSV inductors of up to 38x smaller area and 33% higher quality factor, compared with spiral inductors of the same inductance. To the best of the authors' knowledge, this is the first proposal on improving quality factor of TSV inductors. We hope our study shall point out a new and exciting research direction for 3D IC designers. © 2014 IEEE.
Recommended Citation
U. R. Tida et al., "Through-silicon-via Inductor: is It Real or Just a Fantasy?," Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC, pp. 837 - 842, article no. 6742994, Institute of Electrical and Electronics Engineers, Mar 2014.
The definitive version is available at https://doi.org/10.1109/ASPDAC.2014.6742994
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-147992816-3
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
27 Mar 2014
