Abstract
An integral equation method based on partial capacitances is used to extract the capacitance between two through-silicon-vias (TSVs). the unrealistic assumption of equal potential along the vertical interface of silicon dioxide (SiO2) coating of TSVs in the analytical method has been removed by introducing unknown equivalent charges. the Galerkin method is used here to solve the unknown charge densities in the integral equation and thus, the capacitance between two TSVs can be efficiently calculated. the results are validated by comparing the extracted capacitances with commercial software based on the finite element method. the accuracy and efficiency have been demonstrated. © 2012 IEEE.
Recommended Citation
H. Wang et al., "Capacitance Calculation of TSVs using an Integral Equation Method based on Partial Capacitances," IEEE International Symposium on Electromagnetic Compatibility, pp. 117 - 120, article no. 6351799, Institute of Electrical and Electronics Engineers, Dec 2012.
The definitive version is available at https://doi.org/10.1109/ISEMC.2012.6351799
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-146732061-0
International Standard Serial Number (ISSN)
2158-1118; 1077-4076
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
12 Dec 2012
