Abstract
A fast method to calculate the admittance matrix of through Silicon Vias (TSVs) is proposed in this paper. the silicon dioxide layers are equivalently modelled using the bound charge on the conductor surfaces as well as on the dielectric interface between the silicon dioxide and the silicon regions. Unknown surface densities of both the free and bound charge are expanded using the axial harmonics. Galerkin's method is then applied to obtain the capacitance and conductance matrices. the proposed method is validated with a full wave 2D cross-sectional analysis tool for a typical TSV pair structure. Comparisons with popular closed-form expressions are also discussed. © 2012 IEEE.
Recommended Citation
D. Liu et al., "Fast Admittance Computation for TSV Arrays," IEEE International Symposium on Electromagnetic Compatibility, pp. 28 - 33, article no. 6351755, Institute of Electrical and Electronics Engineers, Dec 2012.
The definitive version is available at https://doi.org/10.1109/ISEMC.2012.6351755
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-146732061-0
International Standard Serial Number (ISSN)
2158-1118; 1077-4076
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
12 Dec 2012
