Incorporation of AsSe Centers in ZnSe Far from Equilibrium

Abstract

An experimental technique employing nuclear transmutation to probe the effects of arsenic doping in ZnSe is presented. ZnSe epitaxial layers are grown from elemental Zn and elemental Se that contains the 75Se isotope. Arsenic dopants are incorporated in ZnSe through the decay of 75Se to 75As which proceeds via electron capture. The 118.5 day half-life of the decay allows ZnSe epitaxial layers to be deposited prior to significant arsenic formation so that AsSe dopants are incorporated after all crystal growth processes are complete. Also, the temperature at the time of dopant incorporation is under investigator control. Because the decay process produces nuclear recoils that are far too small to displace the arsenic dopants from their substitutional selenium sites, no post-growth thermal annealing is required. This experimental technique permits a limiting case of far-from-equilibrium doping, and the long half-life of 75Se results in the gradual incorporation of As(Se) so that time-resolved studies can be performed. In the experimental work reported here, AsSe centers are introduced in ZnSe homoepitaxial layers in concentrations greater than 1.5 x 1018cm-3. Time-resolved low temperature photoluminescence is employed to observe the effects of AsSe doping of ZnSe. © 2002 Elsevier Science Ltd. All rights reserved.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

A. Semiconductors; B. Epitaxial growth; D. Optical properties

International Standard Serial Number (ISSN)

0022-3697

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Elsevier, All rights reserved.

Publication Date

01 Oct 2002

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