Neutron Transmutation Doping as an Experimental Probe for in ZnSe

Abstract

An experimental investigation of the effects of isolated arsenic atoms at substitutional selenium sites in ZnSe is presented. Two methods employing neutron transmutation doping and utilizing the long half-life of (Formula presented) to introduce (Formula presented) dopants in ZnSe are described. In the first method, bulk ZnSe is neutron irradiated and then annealed before significant decay of (Formula presented) occurs. In the second method, a post-neutron-irradiation homoepitaxial crystal-growth technique is used where the (Formula presented) decay product is incorporated in an epitaxial layer of ZnSe after the epitaxial layer is grown. Since the nuclear recoils associated with the decay of (Formula presented) to (Formula presented) are too small to displace the arsenic atoms from their selenium sites, arsenic doping at selenium sites is ensured. © 1996 The American Physical Society.

Department(s)

Electrical and Computer Engineering

International Standard Serial Number (ISSN)

1550-235X; 1098-0121

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 American Physical Society, All rights reserved.

Publication Date

01 Jan 1996

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