Incorporation of CuZn Centers in ZnSe Far from Equilibrium

Abstract

An investigation employing nuclear transmutation to probe the effects of copper doping in ZnSe is presented. Three experimental techniques are developed in the investigation. With the first, as-grown ZnSe is irradiated with thermal neutrons which results, after thermal annealing, in the incorporation of CuZn centers. Observations are consistent with isolated CuZn being involved in the copper red and copper green emissions in ZnSe but not in the Id1 excitonic emission. With the second, it is shown that zinc annealing can be used effectively in investigations involving the irradiation of as-grown ZnSe since the zinc annealing treatment significantly reduces background PL emissions in bulk ZnSe. The third technique employs homoepitaxial ZnSe layer growth from previously irradiated elemental sources. The epitaxial layers display no dominant Id1 excitonic emission and a very low level of deep emissions. Because, with the techniques described here, the copper atoms are introduced at zinc sites after crystal growth processes are complete, the copper atoms are not able to interact with other dopants or lattice defects during growth as they can when incorporated by other means. The absence of interactions during crystal growth permits the unambiguous incorporation, far from equilibrium, of isolated CuZn centers in ZnSe. Copyright © 1996 Elsevier Science Ltd.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

A. Optical materials; A. Semiconductors; B. Epitaxial growth; D. Optical properties

International Standard Serial Number (ISSN)

0022-3697

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Elsevier, All rights reserved.

Publication Date

01 Jan 1997

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