Abstract
In this paper, we present a variational electromagnetic-semiconductor coupled solver to assess the impacts of process variations on the 3D integrated circuit (3D IC) on-chip structures. The solver employs the finite volume method (FVM) to handle a system of equation considering both the full-wave electromagnetic effects and semiconductor effects. With a smart geometrical variation model for the FVM discretization, the solver is able to handle both small-size or large-size variations. Moreover, a weighted principle factor analysis (wPFA) technique is presented to reduce the random variables in both electromagnetic and semiconductor regions, and the spectral stochastic collocation method (SSCM) [10] is used to generate the quadratic statistical model. Numerical results validate the accuracy and efficiency of this solver in dealing with process variations in hybrid material through-silicon via (TSV) structures. © 2012 EDAA.
Recommended Citation
Y. Xu et al., "Efficient Variation-aware EM-semiconductor Coupled Solver For The TSV Structures In 3D IC," Proceedings -Design, Automation and Test in Europe, DATE, pp. 1409 - 1412, article no. 6176583, Institute of Electrical and Electronics Engineers, May 2012.
The definitive version is available at https://doi.org/10.1109/DATE.2012.6176583
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-398108018-6
International Standard Serial Number (ISSN)
1530-1591
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
24 May 2012
