Abstract
We develop a new method based on the high-frequency electromagnetic (EM)-semiconductor coupled simulation to analyze the impact of multi-type process variations happen around semi-conductormetal structure. It is competent to simultaneously handle geometrical variations like surface roughness and material variations like semi-conductor doping profile, which are difficult for traditional stand alone simulation methods. A sparse grid based stochastic spectral collocation method (SSCM) combined with principle factor analysis (PFA) is implemented to accelerate the stochastic simulation. Numerical results confirm the validity and significance of our variational coupled simulation framework. © 2011 IEEE.
Recommended Citation
Y. Xu et al., "Process-variation-aware Electromagnetic-semiconductor Coupled Simulation," Proceedings - IEEE International Symposium on Circuits and Systems, pp. 2853 - 2856, article no. 5938200, Institute of Electrical and Electronics Engineers, Aug 2011.
The definitive version is available at https://doi.org/10.1109/ISCAS.2011.5938200
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-142449473-6
International Standard Serial Number (ISSN)
0271-4310
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
02 Aug 2011
