Abstract
Power Supply Induced Jitter (PSIJ) in High Bandwidth Memory (HBM) I/O Interface is Modeled, Analyzed, and Optimized for Different HBM Generations. Precise Models for VDDQ Power Distribution Networks (PDNs), Simultaneous Switching Current (SSC), and Jitter Sensitivities of the Clock and I/O Buffers Are Implemented for PSIJ Estimation. Compared to the SPICE, the Average Error Rate of the Estimated PSIJ is 4.26 %. the Critical Frequency Bands in the Jitter Spectrum Where Large Jitters Occur Are Derived by Comparing the Relative Impact of the Modeled Interface Factors in the Frequency Domain. for the Optimization, On-Chip and On-Interposer Decoupling Capacitor (Decap) Placement Strategies using Machine Learning (ML) Are Applied. the Decap Effects in the Critical Ranges Are Analyzed. Finally, based on the Integrated Analysis of the Limitation of the Decap Solution and All the I/O Interface Factors, the Major Challenges of High-Frequency PSIJ Are Characterized.
Recommended Citation
H. Park and T. Shin and S. Kim and K. Son and K. Kim and B. Sim and H. Kang and S. Choi and J. Yoon and H. Kim and C. Hwang and J. Kim, "Power Supply Induced Jitter (PSIJ) Modeling, Analysis, and Optimization of High Bandwidth Memory (HBM) I/O Interface," 2023 IEEE Symposium on Electromagnetic Compatibility and Signal/Power Integrity, EMC+SIPI 2023, pp. 125 - 130, Institute of Electrical and Electronics Engineers, Jan 2023.
The definitive version is available at https://doi.org/10.1109/EMCSIPI50001.2023.10241680
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
High bandwidth memory; I/O interface; Power Supply Induced Jitter
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jan 2023
Comments
Ministry of Science, ICT and Future Planning, Grant NRF-2022M3I7A4072293