Abstract
RF Switches Are Typically Used in the RF Front-End of Portable Devices Such as Antenna or Matching Tuners to Improve the RF Link Performance. They Are Usually the First Active Devices after the Antenna and Are Vulnerable to Primary or Secondary ESD Discharges to the Antennas. This Paper Investigates the ESD Behavior of One of the High Frequency Switches Used in the RF-Front-End of Portable Devices and Expresses the Importance of the ESD Pulse that Passes through the Switch and Reaches the Next Stage in the RF Path, Possibly Damaging the Next Stage.
Recommended Citation
S. M. Mousavi et al., "ESD Behavior of RF Switches and Importance of System Efficient ESD Design," 2023 IEEE Symposium on Electromagnetic Compatibility and Signal/Power Integrity, EMC+SIPI 2023, pp. 504 - 509, Institute of Electrical and Electronics Engineers, Jan 2023.
The definitive version is available at https://doi.org/10.1109/EMCSIPI50001.2023.10241687
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Electrostatic discharge (ESD) protection; RF SEED; RF Switch
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jan 2023
