Abstract
Thin films of CdS were grown onto (111) silicon substrates (wafers 2 in in diameter) by employing a horizontal, low-pressure MOCVD system. The observed growth of heteroepitaxial films occurred in the temperature range of 275-325 ±5 °C. The growth of polycrystalline samples with a high degree of preferred orientation occurred at temperatures above 325 ± 5 °C. The later films exhibited irregularly shaped surface pits about 1 μm in depth. These pits were observed by sectioning the substrates and examining them with an SEM; no significant crystallinity was apparent. X-ray analysis of an heteroepitaxial and a polycrystalline film via a profile fitting algorithm revealed bulk strain values normal to the silicon substrate of 0.283% and 0.128% respectively. © 1989.
Recommended Citation
J. L. Boone et al., "MOCVD Of CdS Onto (111) Silicon Substrates," Thin Solid Films, vol. 176, no. 1, pp. 143 - 150, Elsevier, Sep 1989.
The definitive version is available at https://doi.org/10.1016/0040-6090(89)90371-4
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
0040-6090
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Elsevier, All rights reserved.
Publication Date
01 Sep 1989
