Abstract
A contactless method for determining the spatial variation of the free carrier density in CdS is presented. The method involves the correlation of IR transmission with the free carrier density via the IR absorption coefficient. Preliminary measurements indicate a free electron density sensitivity of less than 5x1014 cm-3 and a spatial resolution which is limited only by the spot size of a CO2 (λ=10.6 μm) laser; this should be of the order of 100 μm. Experimental results indicate that the predominate scattering is due to impurity interaction at room temperature; this is indicative of the high degree of compensation in CdS.
Recommended Citation
J. L. Boone et al., "Free Electron Density Measurements By IR Absorption In CdS," Journal of Applied Physics, vol. 58, no. 6, pp. 2296 - 2301, American Institute of Physics, Dec 1985.
The definitive version is available at https://doi.org/10.1063/1.335949
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
0021-8979
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Institute of Physics, All rights reserved.
Publication Date
01 Dec 1985
