Abstract
Operating a silicon planar epitaxial transistor in the inverse configuration allows one to demonstrate clearly the importance of the neutron-induced base current component and its degradation of the emitter efficiency, and, because of the much larger depletion layer, to compute a volume dependent damage constant applicable to all silicon p-n junctions. The importance of minimizing the absolute change versus relative change in radiation hardening studies is clearly illustrated. Surface effects were found to be significant for transistors mounted in gas-filled cans. The diffusion potential was predicted, on theoretical grounds, to vary with neutron fluence, and the theory was experimentally confirmed. Isochronal and isothermal annealing data were obtained for the inverse configuration and from these data, it is concluded that the neutron-induced defect centers are field dependent. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
Recommended Citation
L. S. Su et al., "Radiation And Annealing Characteristics Of Neutron Bombarded Silicon Transistors," IEEE Transactions on Nuclear Science, vol. 15, no. 6, pp. 95 - 107, Institute of Electrical and Electronics Engineers, Jan 1968.
The definitive version is available at https://doi.org/10.1109/TNS.1968.4325037
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
1558-1578; 0018-9499
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jan 1968
