Abstract
A discrete, deterministic mathematical model has been developed for the bulk base region of graded base devices that accounts for both the effects of neutron-induced recombination and built-in electric field in the base region at low, intermediate, and moderate current/injection levels. Exact expressions are developed for the bulk base recombination current and the collector current as functions of neutron fluence. Exact expressions are derived for the base recombination term and the relative rates of neutron-induced base current increase and collector current decrease. These expressions involve exponential and hyperbolic functions and are well suited for numerical computations and theoretical analysis. Damage coefficients for the bulk base recombination current and for the collector current are computed theoretically and are experimentally verified. Copyright © 1970 by The Institute of Electrical and Electronics Engineers, Inc.
Recommended Citation
J. Bereisa and C. A. Goben, "Neutron Dependence Of Neutral Base Region Recombination," IEEE Transactions on Nuclear Science, vol. 17, no. 6, pp. 317 - 324, Institute of Electrical and Electronics Engineers, Jan 1970.
The definitive version is available at https://doi.org/10.1109/TNS.1970.4325812
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
1558-1578; 0018-9499
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jan 1970
